Datasheet Details
| Part number | BUX63 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.71 KB |
| Description | NPN Transistor |
| Datasheet |
 BUX63 Datasheet
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| Part number | BUX63 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.71 KB |
| Description | NPN Transistor |
| Datasheet |
BUX63 Datasheet
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·High Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 325V(Min.) ·Fast Switching Speed ·High Reliability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high frequency and efficiency converters,switching regulators and motor control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 325 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A PC Collector Power Dissipation@TC=25℃ 70 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 3.0 ℃/W BUX63 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BUX63 | Bipolar NPN Device | Semelab |
| Part Number | Description |
|---|---|
| BUX60 | NPN Transistor |
| BUX61 | NPN Transistor |
| BUX62 | NPN Transistor |
| BUX64 | NPN Transistor |
| BUX65 | NPN Transistor |
| BUX66 | PNP Transistor |
| BUX66A | PNP Transistor |
| BUX67 | NPN Transistor |
| BUX67A | NPN Transistor |
| BUX67B | NPN Transistor |