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isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
VCEO(SUS)= 400V(Min) ·High Reliability ·DARLINGTON ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Automotive ignition applications ·Inverters circuits for motor controls
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
650
VCEO
Collector-Emitter Voltage
400
VEBO
Emitter-Base Voltage
5
IC
Collector Current
12
ICM
Collector Current-peak
20
IB
Base Current
1
IBM
Base Current-peak
5
PC
Collector Power Dissipation @TC=25℃
125
Tj
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT V V V A A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETE
BUX90 Datasheet
