Datasheet4U Logo Datasheet4U.com

BUY21 - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- :V(BR)CEO= 180V(Min.) Excellent Safe Operating Area High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in switching-control amplifiers, power gates,switch

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BUY24 NPN Transistor Seme LAB
BUY24 Silicon NPN Power Transistor Inchange Semiconductor
BUY25CS12J-01 250V Radiation Hard power MOSFET Infineon
BUY25CS12K-01 Radiation Hard power MOSFET Infineon
BUY25CS12K-11 HiRel RadHard Power-MOS Infineon

Other Datasheets by Inchange Semiconductor

Part Number Description
BUY20 NPN Transistor
BUY22 NPN Transistor
BUY23 NPN Transistor
BUY29 NPN Transistor
BUY12 NPN Transistor

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor BUY21 DESCRIPTION ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 180V(Min.) ·Excellent Safe Operating Area ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching-control amplifiers, power gates,switching regulators, converters, and inverter.
Published: |