Datasheet4U Logo Datasheet4U.com

D1412 - Silicon NPN Power Transistor

General Description

Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 4A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) Complement to Type 2SB1019 APPLICATIONS

High current switching applications.

Power amplifier applications.

📥 Download Datasheet

Full PDF Text Transcription for D1412 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for D1412. For precise diagrams, and layout, please refer to the original PDF.

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD1412 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 4A ·Col...

View more extracted text
N ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 4A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) ·Complement to Type 2SB1019 APPLICATIONS ·High current switching applications. ·Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage IC Collector Current-Continuous 5V 7A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1A 2 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Toshiba Logo D1412A 2SD1412A Toshiba

More Datasheets from Inchange Semiconductor

Part Number Description
D1410 Silicon NPN Darlington Power Transistor
D1416 Silicon NPN Darlington Power Transistor
D1404 Silicon NPN Power Transistor