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D44VH1 Datasheet Preview

D44VH1 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistors
D44VH Series
DESCRIPTION
·Low Saturation Voltage
·Fast Switching Speed
·Complement to Type D45VH Series
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high-speed switching applications, such as
switching regulators and high frequency inverters. They are
also well-suited for drivers for high power switching circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
D44VH 1
50
VCEV
Collector-Emitter
Voltage
D44VH 4
70
V
D44VH 7
80
D44VH 10 100
D44VH 1
30
VCEO
Collector-Emitter
Voltage
D44VH 4
45
V
D44VH 7
60
D44VH 10
80
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
20
A
83
W
150
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
-55~150
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
1.5 /W
Thermal Resistance,Junction to Ambient 62.5 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered tradema




INCHANGE

D44VH1 Datasheet Preview

D44VH1 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
D44VH Series
MIN TYP. MAX UNIT
D44VH 1
30
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
D44VH 4
D44VH 7
IC= 25mA ;IB= 0
VCE(sat)-1
D44VH 10
Collector-Emitter Saturation Voltage IC= 8A ;IB= 0.4A
VCE(sat)-2
VBE(sat)
ICEV
IEBO
Collector-Emitter Saturation Voltage IC= 15A ;IB= 3A;TC=100
Base-Emitter Saturation Voltage
Collector Cutoff Current
IC= 8A ;IB= 0.4A
IC= 8A ;IB= 0.4A;TC=100
VCE=RatedVCE;VBE(off)=4V
VCE=RatedVCE;VBE(off)=4V;TC=100
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 2A ; VCE= 1V
hFE-2
COB
fT
DC Current Gain
Output Capacitance
Current-Gain—Bandwidth Product
IC= 4A ; VCE= 1V
IE= 0;VCB= 10V,ftest= 1.0MHz
IC= 0.1A;VCE= 10V;ftest= 20MHz
45
V
60
80
0.4
V
0.8
V
1.2
1.1
V
10
100
μA
10 μA
35
20
120
pF
50
MHz
Switching Times
td
Delay Time
50
ns
tr
Rise Time
ts
Storage Time
IC= 8A; IB1= -IB2= 0.8A
VCC= 20V
250
ns
700
ns
tf
Fall Time
90
ns
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered tradema



Part Number D44VH1
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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D44VH1 Datasheet PDF





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