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D44H8 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistors.

General Description

·Low Saturation Voltage ·Fast Switching Speeds ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators,converters and power amplifier.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 20 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 75 ℃/W D44H8 isc website:.iscsemi.

1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors D44H8 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCE(sat) PARAMETER Collector-EmitterSaturation Voltage CONDITIONS IC= 8A ;IB= 0.8 A MIN TYP MAX UNIT 1 V VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IC= 8A ;IB= 0.8 A VCE=Rated VCEO;

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