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D44H11 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor D44H11.

General Description

·Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·plement to Type D45H11 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators,converters and power amplifier.

Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 80 V 5 V 10 A 20 A 50 W -55~150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 75 ℃/W isc website:.iscsemi.

1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor D44H11 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCE(sat) Collector-EmitterSaturation Voltage IC= 8A ;IB= 0.4 A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A ;IB= 0.8 A 1.5 V ICES Collector Cutoff Current VCE=Rated VCEO;

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