Datasheet4U Logo Datasheet4U.com

D857 - Silicon NPN Power Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) Good Linearity of hFE Wide Area of Safe Operation Complement to Type 2SB762 APPLICATIONS

Designed for power amplifier applications.

📥 Download Datasheet

📁 Similar Datasheet

  • D850 - Silicon Diffused Power Transistor (SavantIC)
  • D850N - Rectifier Diode (Infineon)
  • D850N - HIGH POWER STANDARD RECTIFIER (PST)
  • D851 - NPN Transistor (ETC)
  • D852 - NPN Transistor (ETC)
  • D856 - 2SD856 (ETC)
  • D858 - 2SD858 (Panasonic Semiconductor)
  • D85C220 - (D85C220 / D85C224) FAST REGISTERED SPEED (Intel Corporation)
  • D85C224 - (D85C220 / D85C224) FAST REGISTERED SPEED (Intel Corporation)
Other Datasheets by INCHANGE
  • D858 - Silicon NPN Power Transistor

Full PDF Text Transcription

Click to expand full text
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD857 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB762 APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak Collector Power Dissipation PC @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 8 A 40 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.
Published: |