isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 13A
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 80V; VGS= 0
VSD
Forward On-Voltage
IS= 13A; VGS= 0
DMT10H010LCT
MIN MAX UNIT
100
V
1.4
3.0
V
9.5
mΩ
±100 nA
1.0
μA
1.3
V
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notification. The information contained herein is presented only as a guide for the applications of
our products.
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