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DMT10H010LSSQ - 100V N-CHANNEL MOSFET

General Description

This MOSFET is designed to meet the stringent requirements of automotive applications.

Backlighting Power management functions DC-DC converters SO-8 S

Key Features

  • 100% Unclamped Inductive Switching (UIS) Test in Production.
  • Ensures More Reliable and Robust End.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DMT10H010LSSQ 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 9.5mΩ @ VGS = 10V 12mΩ @ VGS = 6V 14.5mΩ @ VGS = 4.5V ID Max TA = +25°C 12A 11A 10A Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:  Backlighting  Power management functions  DC-DC converters SO-8 S Features and Benefits  100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application  High Conversion Efficiency  Low RDS(ON) – Minimizes On-State Losses  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.