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DMT10H010LSS - N-CHANNEL MOSFET

General Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance.

This device is ideal for use in Notebook battery power management and Loadswitch.

Backlighting Power Management Functions DC-DC Co

Key Features

  • 100% Unclamped Inductive Switch (UIS) Test in Production.
  • High Conversion Efficiency.
  • Low RDS(ON).
  • Minimizes On State Losses.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
  • Case: SO-8.
  • Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classi.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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A DAVDAVNACNECDEI INNNEFFOWORRPMRMAOATDIT IUOOCNNT DMT10H010LSS 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 9.5mΩ @ VGS = 10V ID TC = +25°C 29.5A Description and Applications This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and Loadswitch.  Backlighting  Power Management Functions  DC-DC Converters SO-8 S Features and Benefits  100% Unclamped Inductive Switch (UIS) Test in Production  High Conversion Efficiency  Low RDS(ON) – Minimizes On State Losses  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.