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DMT10H010LK3 - 100V N-CHANNEL MOSFET

General Description

This new generation MOSFET

Key Features

  • 100% Unclamped Inductive Switching.
  • Ensures More Reliable and Robust End.

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Product Summary BVDSS 100V RDS(ON) Max 8.8mΩ @ VGS = 10V 11.3mΩ @ VGS = 6.0V ID TC = +25°C 68.8A 60.7A Green DMT10H010LK3 100V N-CHANNEL ENHANCEMENT MODE MOSFET Features  100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application  Low RDS(ON) – Minimizes Power Losses  Low QG – Minimizes Switching Losses  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Description This new generation MOSFET features low on-resistance and fast switching, making it ideal for high-efficiency power management applications. Applications  Power Management Functions  DC-DC Converters  Backlighting Mechanical Data  Case: TO252 (DPAK)  Case Material: Molded Plastic, ―Green‖ Molding Compound.