Download DMT6005LCT Datasheet PDF
Inchange Semiconductor
DMT6005LCT
DMT6005LCT is N-Channel MOSFET manufactured by Inchange Semiconductor.
Features - Drain Current - ID= 100A@ TC=25℃ - Drain Source Voltage- : VDSS= 60V(Min) - Static Drain-Source On-Resistance : RDS(on) = 6.0mΩ(Max) - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION - Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage Gate-Source Voltage-Continuous ±20 Drain Current-Continuous Drain Current-Single Pluse Total Dissipation @TC=25℃ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX...