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DMT6005LSS - N-CHANNEL MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

High Frequency Switching Synchronous Rectification DC-DC Converters Mechanical Da

Key Features

  • High Conversion Efficiency.
  • Low RDS(ON).
  • Minimizes On-State Losses.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DMT6005LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 6mΩ @ VGS = 10V 8.9mΩ @ VGS = 4.5V ID Max TA = 25°C 13.5A 11.3A Features and Benefits  High Conversion Efficiency  Low RDS(ON) – Minimizes On-State Losses  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.  High Frequency Switching  Synchronous Rectification  DC-DC Converters Mechanical Data  Case: SO-8  Case Material: Molded Plastic, "Green" Molding Compound.