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DMT6005LFG - 60V N-CHANNEL MOSFET

General Description

and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance

(RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Case Material: Molded Plastic, "Green" Molding

Key Features

  • 100% Unclamped Inductive Switching (UIS) Test in Production.
  • Ensures More Reliable and Robust End.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DMT6005LFG Green 60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary BVDSS 60V RDS(ON) Max 4.1mΩ @ VGS = 10V 6.3mΩ @ VGS = 6V 7mΩ @ VGS = 4.5V ID Max TC = +25°C (Note 9) 100A 81A 77A Features and Benefits  100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application  Low RDS(ON) – Ensures On-State Losses are Minimized  Small Form Factor Thermally Efficient Package Enables Higher Density End Products  Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.