FCB110N65F - N-Channel MOSFET

Product Overview

INCHANGE

Datasheet Details

Part number	FCB110N65F
Manufacturer	INCHANGE
File Size	249.72 KB
Description	N-Channel MOSFET
Datasheet	FCB110N65F Datasheet
Additional preview pages of the FCB110N65F datasheet.

Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 650 V ±20 V ID Drain Current-Continuous 35 A IDM Drain Current-Single Pluse 105 A PD Total Dissipation @TC=25℃ 357 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c T

Features

Drain Current.
ID= 35A@ TC=25℃.
Drain Source Voltage- : VDSS= 650V(Min).
Static Drain-Source On-Resistance : RDS(on) = 110mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: May 15, 2021 |