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FCH099N60E - N-Channel MOSFET

General Description

Power factor correction Switched mode power supplies Uninterruptible Power Supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS VGS ID Drain-Source Voltage Gate-Source Voltage-Continuous AC (f>1Hz) Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Diss

Key Features

  • Static Drain-Source On-Resistance : RDS(on) = 99mΩ(Max).
  • Fast Switching.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc N-Channel MOSFET Transistor FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 99mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Power factor correction ·Switched mode power supplies ·Uninterruptible Power Supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS VGS ID Drain-Source Voltage Gate-Source Voltage-Continuous AC (f>1Hz) Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 600 V ±30 V 37 A 152 A 350 W -55~150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.