Datasheet4U Logo Datasheet4U.com

FCH041N60F - N-Channel MOSFET

Key Features

  • With TO-247 packaging.
  • With low gate drive requirements.
  • Easy to drive.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FCH041N60F N-Channel MOSFET ON Semiconductor
FCH041N60F N-Channel MOSFET Fairchild Semiconductor
FCH041N60F-F085 N-Channel MOSFET ON Semiconductor
FCH041N60E MOSFET Fairchild Semiconductor
FCH041N60E N-Channel MOSFET ON Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
FCH040N65S3 N-Channel MOSFET
FCH043N60 N-Channel MOSFET
FCH067N65S3 N-Channel MOSFET
FCH070N60E N-Channel MOSFET
FCH072N60F N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 76 48.1 228 PD Total Dissipation 595 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.21 UNIT ℃/W FCH041N60F isc website：www.iscsemi.