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FCH041N60E - N-Channel MOSFET

General Description

super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Key Features

  • 650 V @ TJ = 150°C.
  • Typ. RDS(on) = 36 mW.
  • Ultra Low Gate Charge (Typ. Qg = 285 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 735 pF).
  • 100% Avalanche Tested.
  • An Integrated Gate Resistor.
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.

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Full PDF Text Transcription (Reference)

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MOSFET – N-Channel, SUPERFET) II, Easy‐Drive 600 V, 77 A, 41 mW FCH041N60E Description SUPERFET II MOSFET is onsemi’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SUPERFET II MOSFET series. Noted by the “E” part number suffix, this family helps manage EMI issues and allows for easier design implementation.