FCH041N60F Key Features
- 650 V @ TJ = 150°C
- Typ. RDS(on) = 36 mW
- Ultra Low Gate Charge (Typ. Qg = 277 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 748 pF)
- 100% Avalanche Tested
- This Device is Pb-Free, Halide Free, and is RoHS pliant
- Part: FCH041N60F
- Description: N-Channel MOSFET
- Manufacturer: onsemi
- Size: 298.10 KB
Other FCH041N60F Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Fairchild Semiconductor |
FCH041N60F | N-Channel MOSFET |
Inchange Semiconductor |
FCH041N60F | N-Channel MOSFET |
|
Fairchild Semiconductor |
FCH041N60E | MOSFET |