FCH041N65F
Overview
- 700 V @ TJ = 150°C
- Typ. RDS(on)) = 36 mW
- Ultra Low Gate Charge (Typ. Qg = 226 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 1278 pF)
- 100% Avalanche Tested
- This Device is Pb-Free and is RoHS Compliant
Related Datasheets
- FCH041N65F — Fairchild Semiconductor — MOSFET
- FCH041N60F — Inchange Semiconductor — N-Channel MOSFET
- FCH041N60E — Fairchild Semiconductor — MOSFET