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FDP20N50 - N-Channel MOSFET

General Description

Drain Current ID=20A@ TC=25℃ Drain Source Voltage- : VDSS=500V(Min) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS These devices are well suited for high efficient switched mode power supplies and active

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · These devices are well suited for high efficient switched mode power supplies and active power factor correction. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS VGS ID PD Drain-Source Voltage (VGS=0) Gate-Source Voltage Drain Current-continuous@ TC=25℃ Power Dissipation @TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature Range VALUE UNIT 500 V ±30 V 20 A 280 W -55~150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Thermal Resistance,Junction to Ambient 62.