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IPA180N10N3 - N-Channel MOSFET

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Overview

isc N-Channel MOSFET Transistor IPA180N10N3,IIPA180N10N3 ·.

Key Features

  • Low drain-source on-resistance: RDS(on) ≤18mΩ (max).
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Infineon Logo IPA180N10N3 Power-Transistor Infineon
Infineon Technologies Logo IPA180N10N3G Power-Transistor Infineon Technologies

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