IPD180N10N3 mosfet equivalent, n-channel mosfet.
*Static drain-source on-resistance:
RDS(on)≤18mΩ
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance an.
of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for .
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