Datasheet4U Logo Datasheet4U.com

IPD33CN10N - N-Channel MOSFET

Key Features

  • Static drain-source on-resistance: RDS(on)≤34mΩ.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IPD33CN10N Power-Transistor Infineon
IPD33CN10NG Power-Transistor Infineon
IPD30N03S2L-07 Power-Transistor Infineon
IPD30N03S2L-10 Power-Transistor Infineon
IPD30N03S2L-20 Power-Transistor Infineon

Other Datasheets by Inchange Semiconductor

Part Number Description
IPD30N03S2L N-Channel MOSFET
IPD30N10S3L-34 N-Channel MOSFET
IPD320N20N3 N-Channel MOSFET
IPD350N06L N-Channel MOSFET
IPD025N06N N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor IPD33CN10N,IIPD33CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤34mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 27 IDM Drain Current-Single Pulsed 108 PD Total Dissipation @TC=25℃ 58 Tj Max.