IPI086N10N3 mosfet equivalent, n-channel mosfet.
*Static drain-source on-resistance:
RDS(on) ≤8.2mΩ
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for r.
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
100
V
VGS
Gate-So.
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