Datasheet4U Logo Datasheet4U.com

IPP05CN10N - N-Channel MOSFET

Key Features

  • br>.
  • Static drain-source on-resistance: RDS(on) ≤5.1mΩ.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IPP05CN10N Power-Transistor Infineon
IPP05CN10NG Power-Transistor Infineon
IPP050N03LF2S MOSFET Infineon
IPP050N06N Power-Transistor Infineon
IPP050N06NG Power-Transistor Infineon Technologies

Other Datasheets by Inchange Semiconductor

Part Number Description
IPP051N15N5 N-Channel MOSFET
IPP052N06L3 N-Channel MOSFET
IPP052N08N5 N-Channel MOSFET
IPP052NE7N3 N-Channel MOSFET
IPP055N03L N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor IPP05CN10N，IIPP05CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 100 IDM Drain Current-Single Pulsed 400 PD Total Dissipation @TC=25℃ 300 Tj Max.