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IPU80R1K4CE Datasheet - INCHANGE

N-Channel MOSFET

IPU80R1K4CE Features

* Static drain-source on-resistance: RDS(on)≤1.4Ω(@VGS= 10V; ID= 2.3A)

* Advanced trench process technology

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* APPLICATIONS

* Fast switching application.

* ABSOLUTE MAXIM

IPU80R1K4CE Datasheet (260.61 KB)

Preview of IPU80R1K4CE PDF

Datasheet Details

Part number:

IPU80R1K4CE

Manufacturer:

INCHANGE

File Size:

260.61 KB

Description:

N-channel mosfet.

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IPU80R1K4CE N-Channel MOSFET INCHANGE

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