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IRFB3307Z N-Channel MOSFET

IRFB3307Z Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB3307Z， IIRFB3307Z *.

IRFB3307Z Features

* Static drain-source on-resistance: RDS(on) ≤5.8mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRFB3307Z Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 75 IDM Drain Current-Single Pulsed 480 PD Total Dissipation @TC=25℃ 230 Tj Max. Operating Junction Temperature 175 Tstg Storage Te

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Datasheet Details

Part number
IRFB3307Z
Manufacturer
INCHANGE
File Size
241.92 KB
Datasheet
IRFB3307Z-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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