Full PDF Text Transcription for IRFB42N20D (Reference)
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isc N-Channel MOSFET Transistor IRFB42N20D，IIRFB42N20D ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤55mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche...
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RDS(on) ≤55mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High frequency DC-DC converters ·Uninterruptible Power Supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 44 IDM Drain Current-Single Pulsed 180 PD Total Dissipation @TC=25℃ 330 Tj Max.
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