Datasheet4U Logo Datasheet4U.com

IRFI540N - N-Channel MOSFET

Features

  • Low drain-source on-resistance: RDS(on) ≤ 52mΩ (max).
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – IRFI540N

📁 Similar Datasheet

  • IRFI540N - Power MOSFET (International Rectifier)
  • IRFI540NPBF - HEXFET Power MOSFET (International Rectifier)
  • IRFI540A - Advanced Power MOSFET (Fairchild Semiconductor)
  • IRFI540G - HEXFET POWER MOSFET (International Rectifier)
  • IRFI540G - Power MOSFET (Vishay)
  • IRFI510 - Advanced Power MOSFET (Fairchild Semiconductor)
  • IRFI510A - Advanced Power MOSFET (Fairchild Semiconductor)
  • IRFI510G - Power MOSFET (International Rectifier)
  • IRFI510G - Power MOSFET (Vishay)
  • IRFI520A - Advanced Power MOSFET (Fairchild Semiconductor)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤ 52mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 20 IDM Drain Current-Single Pulsed 110 PD Total Dissipation @TC=25℃ 54 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 2.8 UNIT ℃/W IRFI540N isc website：www.iscsemi.
Published: |