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IRFIB6N60A - N-Channel MOSFET

INCHANGE

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Datasheet Details

Part number	IRFIB6N60A
Manufacturer	INCHANGE
File Size	270.60 KB
Description	N-Channel MOSFET
Datasheet	IRFIB6N60A-INCHANGE.pdf

IRFIB6N60A Product details

Features

Low drain-source on-resistance: RDS(ON) =0.75Ω (MAX).
Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Dec 15, 2020 |