IRFIB6N60A
IRFIB6N60A is Power MOSFET manufactured by Vishay.
FEATURES
- Low gate charge Qg results in simple drive requirement
- Improved gate, avalanche and dynamic d V/dt ruggedness
- Fully characterized capacitance and avalanche voltage and current
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Switch mode power supply (SMPS)
- Uninterruptible power supply
- High speed power switching
- High voltage isolation = 2.5 k VRMS (t = 60 s, f = 60 Hz)
TYPICAL SMPS TOPOLOGIES
- Single transistor forward
- Active clamped forward
ORDERING INFORMATION
Package Lead (Pb)-free
TO-220 FULLPAK IRFIB6N60APb F
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
Continuous drain current
Pulsed drain current a Linear derating factor
VGS at 10 V
TC = 25 °C TC = 100 °C
Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery d V/dt c
TC = 25 °C
EAS IAR EAR PD d V/dt
Operating junction and storage temperature range Soldering remendations (peak temperature) d
For 10 s
TJ, Tstg
Mounting torque
M3 screw
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Starting TJ = 25 °C, L = 6.8 m H, RG = 25 Ω, IAS = 9.2 A (see fig. 12) c. ISD ≤ 9.2 A, d I/dt ≤ 50 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case
LIMIT 600 ± 30 5.5 3.5 37 0.48 290 9.2 6.0 60 5.0
-55 to +150 300 0.6
UNIT...
