IRFIB6N60A
IRFIB6N60A is N-Channel MOSFET manufactured by Inchange Semiconductor.
EATURES
- Low drain-source on-resistance:
RDS(ON) =0.75Ω (MAX)
- Enhancement mode:
Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25m A)
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- Switching Voltage Regulators
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
Gate-Source Voltage
±30
Drain Current-Continuous
Drain Current-Single Pulsed
Total Dissipation @TC=25℃
Tj
Max. Operating Junction Temperature -55~150
℃
Tstg
Storage Temperature
-55~150
℃
- THERMAL CHARACTERISTICS
SYMBOL...
