Datasheet4U Logo Datasheet4U.com

IRFIB6N60A - N-Channel MOSFET

Datasheet Summary

Features

  • Low drain-source on-resistance: RDS(ON) =0.75Ω (MAX).
  • Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – IRFIB6N60A

Datasheet Details

Part number IRFIB6N60A
Manufacturer INCHANGE
File Size 270.60 KB
Description N-Channel MOSFET
Datasheet download datasheet IRFIB6N60A Datasheet
Additional preview pages of the IRFIB6N60A datasheet.

📁 Similar Datasheet

Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
iscN-Channel MOSFET Transistor IRFIB6N60A ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.75Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 5.5 A IDM Drain Current-Single Pulsed 37 A PD Total Dissipation @TC=25℃ 60 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 2.1 UNIT ℃/W isc website：www.iscsemi.
Published: |