IRFIB6N60APBF Description
l l Single Transistor Forward Active Clamped Forward .irf. Notes through are on page 8 1 11/13/03 .. IRFIB6N60APbF Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
IRFIB6N60APBF Key Features
- Switch Mode Power Supply ( SMPS )
- Uninterruptable Power Supply
- High speed power switching
- High Voltage Isolation = 2.5KVRMS
- Lead-Free Benefits
- Low Gate Charge Qg results in Simple Drive Requirement
- Improved Gate, Avalanche and dynamic dv/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current VDSS 600V ID 5.5A TO-220 FULLP AK G DS