Datasheet4U Logo Datasheet4U.com

IRFIBE30G Datasheet N-Channel MOSFET

Manufacturer: Inchange Semiconductor

📥 Download Datasheet

Overview

iscN-Channel MOSFET Transistor IRFIBE30G ·.

Key Features

  • Low drain-source on-resistance: RDS(ON) =3.0Ω (MAX).
  • Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
International Rectifier Logo IRFIBE30G Power MOSFET International Rectifier
Vishay Logo IRFIBE30G Power MOSFET Vishay

More Datasheets from Inchange Semiconductor

Part Number Description
IRFIBE20G N-Channel MOSFET
IRFIB41N15D N-Channel MOSFET
IRFIB5N65A N-Channel MOSFET
IRFIB6N60A N-Channel MOSFET
IRFIB7N50A N-Channel MOSFET
IRFIBC20G N-Channel MOSFET
IRFIBC30G N-Channel MOSFET
IRFIBC40G N-Channel MOSFET
IRFIBC40GLC N-Channel MOSFET
IRFI1010N N-Channel MOSFET