900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






INCHANGE

IRFP264 Datasheet Preview

IRFP264 Datasheet

N-Channel MOSFET

No Preview Available !

isc N-Channel MOSFET Transistor
·FEATURES
·Static drain-source on-resistance:
RDS(on)75m
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Fast switching power application
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
250
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
38
IDM
Drain Current-Single Pulsed
150
PD
Total Dissipation @TC=25
280
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT
V
V
A
A
W
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channel-to-case thermal resistance
Rth(j-a) Channel-to-ambient thermal resistance
MAX
0.45
62
UNIT
/W
/W
IRFP264
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




INCHANGE

IRFP264 Datasheet Preview

IRFP264 Datasheet

N-Channel MOSFET

No Preview Available !

isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=250μA
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=250μA
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=23A
IGSS
Gate-Source Leakage Current
VGS=± 20V
IDSS
Drain-Source Leakage Current
VDS=250V; VGS= 0V
VSD
Diode forward voltage
Is=38A, VGS = 0V
IRFP264
MIN TYP MAX UNIT
250
V
2
4
V
75
mΩ
±100 nA
25
μA
1.8
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark


Part Number IRFP264
Description N-Channel MOSFET
Maker INCHANGE
PDF Download

IRFP264 Datasheet PDF






Similar Datasheet

1 IRFP260 Standard Power MOSFET
IXYS Corporation
2 IRFP260 Power MOSFET
Vishay Siliconix
3 IRFP260 Power MOSFET
International Rectifier
4 IRFP260 N-Channel MOSFET
INCHANGE
5 IRFP260M N-Channel MOSFET
INCHANGE
6 IRFP260MPBF Power MOSFET
International Rectifier
7 IRFP260N Power MOSFET
International Rectifier
8 IRFP260N N-Channel MOSFET
INCHANGE
9 IRFP260NPBF HEXFET Power MOSFET
International Rectifier





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy