Description
Combine with the fast switching speed and ruggedized device
design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
-100
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
-23
IDM
Drain Current-Single Pulsed
-76
PD
Total Dissipation @TC=25℃
140
Tj
Max.Operating Junction Temperature
175
Tstg
Storage Temperature
-5
Features
- br>.
- Static drain-source on-resistance:
RDS(on)≤0.117Ω.
- Enhancement mode:.
- 100% avalanche tested.
- Minimum Lot-to-Lot variations for robust device
performance and reliable operation.
IRFP9140N Datasheet
