Datasheet Details
| Part number | IRFP9140N |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 237.29 KB |
| Description | N-Channel MOSFET |
| Datasheet | IRFP9140N-INCHANGE.pdf |
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Overview: isc P-Channel MOSFET Transistor IRFP9140N，IIRFP9140N ·.
| Part number | IRFP9140N |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 237.29 KB |
| Description | N-Channel MOSFET |
| Datasheet | IRFP9140N-INCHANGE.pdf |
|
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|
·Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -23 IDM Drain Current-Single Pulsed -76 PD Total Dissipation @TC=25℃ 140 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.1 40 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor IRFP9140N，IIRFP9140N ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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IRFP9140N | Power MOSFET | IRF |
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IRFP9140NPBF | Power MOSFET | International Rectifier |
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IRFP9140 | P-Channel Power MOSFET | INTERSIL |
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IRFP9140 | (IRF9140 - IRF9143) P-Channel Power MOSFETs | Samsung Electronics |
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IRFP9140 | Power MOSFET | Vishay |
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