IRFP9140 Overview
IRFP9140 Data Sheet July 1999 File Number 2292.4 19A, 100V, 0.200 Ohm, P-Channel Power MOSFET This is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching convertors, motor drivers,...
IRFP9140 Key Features
- 19A, 100V
- rDS(ON) = 0.200Ω
- Single Pulse Avalanche Energy Rated
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
