Datasheet4U Logo Datasheet4U.com

IRFP9140N - N-Channel MOSFET

Datasheet Summary

Description

design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source

Features

  • br>.
  • Static drain-source on-resistance: RDS(on)≤0.117Ω.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – IRFP9140N

Datasheet Details

Part number IRFP9140N
Manufacturer INCHANGE
File Size 237.29 KB
Description N-Channel MOSFET
Datasheet download datasheet IRFP9140N Datasheet
Additional preview pages of the IRFP9140N datasheet.

📁 Similar Datasheet

  • IRFP9140N - Power MOSFET (IRF)
  • IRFP9140NPBF - Power MOSFET (International Rectifier)
  • IRFP9140 - P-Channel Power MOSFET (INTERSIL)
  • IRFP9140 - (IRF9140 - IRF9143) P-Channel Power MOSFETs (Samsung Electronics)
  • IRFP9140 - Power MOSFET (Vishay)
  • IRFP9140 - Power MOSFET (International Rectifier)
  • IRFP9141 - (IRF9140 - IRF9143) P-Channel Power MOSFETs (Samsung Electronics)
  • IRFP9142 - (IRF9140 - IRF9143) P-Channel Power MOSFETs (Samsung Electronics)
  • IRFP9143 - (IRF9140 - IRF9143) P-Channel Power MOSFETs (Samsung Electronics)
  • IRFP9130 - P-CHANNEL POWER MOSFETS (Samsung)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc P-Channel MOSFET Transistor IRFP9140N，IIRFP9140N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.117Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -23 IDM Drain Current-Single Pulsed -76 PD Total Dissipation @TC=25℃ 140 Tj Max.
Published: |