Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features
- 7)
NOTES: 1 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982. 2 C O N TR O LLIN G D IM E N S IO N : IN C H . 3 C O N F O R M S TO JE D E C O U TLIN E T O -247-A C . 2 .40 (.09 4) 2 .00 (.07 9) 2X 5.45 (.2 1 5) 2X
1 .4 0 (.0 56 ) 3 X 1 .0 0 (.0 39 ) 0 .2 5 (.0 10 ) M 3 .4 0 (.1 33 ) 3 .0 0 (.1 18 ) C A S
0 .80 (.03 1) 3X 0 .40 (.01 6) 2.60 (.1 0 2) 2.20 (.0 8 7)
Part Marking Information
TO-247AC
E X A M P L E : TH IS IS A N IR F P E 3 0 W ITH A S S E M B L Y LOT CODE 3.
IRFP9140N Datasheet
