Key Features
- Static drain-source on-resistance: RDS(on) ≤11mΩ
- Enhancement mode
- Fast Switching Speed
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- reliable device for use in a wide variety of applications
Datasheets by Manufacturer
| Part Number |
Manufacturer |
Description |
|
IRFZ48ZPbF
|
International Rectifier |
Power MOSFET |
|
IRFZ48R
|
International Rectifier |
Power MOSFET |
|
IRFZ48NPBF
|
International Rectifier |
Power MOSFET |
|
IRFZ48S
|
Vishay |
Power MOSFET |
|
IRFZ45
|
Samsung Electronics |
N-Channel Power MOSFETS |
|
IRFZ46Z
|
International Rectifier |
AUTOMOTIVE MOSFET |
|
IRFZ44VSPbF
|
International Rectifier |
HEXFET Power MOSFET |
|
IRFZ46NLPbF
|
International Rectifier |
HEXFET Power MOSFET |
|
IRFZ46ZS
|
International Rectifier |
AUTOMOTIVE MOSFET |
|
IRFZ44L
|
Vishay |
Power MOSFET |
