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IRFZ48ZLPbF - Power MOSFET

Download the IRFZ48ZLPbF datasheet PDF. This datasheet also covers the IRFZ48ZPbF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFZ48ZPbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFZ48Z N-Channel MOSFET INCHANGE
IRFZ48ZS N-Channel MOSFET INCHANGE
IRFZ48 Power MOSFET Vishay
IRFZ48 N-Channel MOSFET INCHANGE
IRFZ48L Power MOSFET Vishay

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFZ48Z AUTOMOTIVE MOSFET
IRFZ48ZPbF Power MOSFET
IRFZ48ZSPbF Power MOSFET
IRFZ48N Power MOSFET
IRFZ48NL Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 95574A IRFZ48ZPbF IRFZ48ZSPbF Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.