Download IRL3705N Datasheet PDF
Inchange Semiconductor
IRL3705N
IRL3705N is N-Channel MOSFET manufactured by Inchange Semiconductor.
FEATURES - Static drain-source on-resistance: RDS(on) ≤10mΩ - Enhancement mode - Fast Switching Speed - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - DESCRITION - reliable device for use in a wide variety of applications - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage Gate-Source Voltage ±16 Drain Current-Continuous Drain Current-Single Pulsed Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ - THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.9 62 UNIT ℃/W ℃/W isc website:.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET...