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IRL3705NLPBF - HEXFET Power MOSFET

General Description

l l IRL3705NSPbF IRL3705NLPbF D HEXFET® Power MOSFET VDSS = 55V G S RDS(on) = 0.01Ω ID = 89A† Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C V GS EAS IAR EAR dv/dt TJ TSTG Fifth Generation HEXFETs from International Rectifier utilize advanced processing

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📁 Similar Datasheet

Part Number Description Manufacturer
IRL3705NL N-Channel MOSFET INCHANGE
IRL3705N N-Channel MOSFET INCHANGE
IRL3705NPBF N-Channel MOSFET INCHANGE
IRL3705NPbF Power MOSFET Infineon
IRL3705NS N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRL3705NL Power MOSFET
IRL3705N Power MOSFET
IRL3705NPBF Power MOSFET
IRL3705NS Power MOSFET
IRL3705NSPBF HEXFET Power MOSFET

Full PDF Text Transcription (Reference)

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www.DataSheet4U.com PD - 95381 Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRL3705NS) l Low-profile through-hole (IRL3705NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l IRL3705NSPbF IRL3705NLPbF D HEXFET® Power MOSFET VDSS = 55V G S RDS(on) = 0.01Ω ID = 89A† Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C V GS EAS IAR EAR dv/dt TJ TSTG Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.