IRL3705NLPBF Description
l l IRL3705NSPbF IRL3705NLPbF D HEXFET® Power MOSFET VDSS = 55V G S RDS(on) = 0.01Ω ID = 89A Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C V GS EAS IAR EAR dv/dt TJ TSTG Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device...
IRL3705NLPBF Key Features
- Surface Mount (IRL3705NS)
- Low-profile through-hole (IRL3705NL)
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated