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IRL3705NPBF - N-Channel MOSFET

Key Features

  • Static drain-source on-resistance: RDS(on) ≤10mΩ.
  • Lead-Free.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc N-Channel MOSFET Transistor IRL3705NPBF ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤10mΩ ·Lead-Free ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 55 V VGS Gate-Source Voltage ±16 V ID Drain Current-Continuous 89 A IDM Drain Current-Single Pulsed 310 A PD Total Dissipation @TC=25℃ 170 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 0.9 ℃/W isc website：www.