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Isc N-Channel MOSFET Transistor
·FEATURES ·Low power loss ·High speed switching ·Low on-resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications ·Motor control ·DC – DC converters
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃ TC=100℃
Drain Current-Single Pulsed
PD
Total Dissipation
Tj
Operating Junction Temperature
Tstg
Storage Temperature
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c)
Channel-to-case thermal resistance
Rth(ch-a)
Channel-to-ambient thermal resistance
INCHANGE Semiconductor
IRL3705NL
VALUE 55
±16 89 63 310
170
-55~175
-55~175
UNIT V V A A W ℃ ℃
MAX 0.