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IRL3705NSPBF - HEXFET Power MOSFET

Download the IRL3705NSPBF datasheet PDF. This datasheet also covers the IRL3705NLPBF variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

l l IRL3705NSPbF IRL3705NLPbF D HEXFET® Power MOSFET VDSS = 55V G S RDS(on) = 0.01Ω ID = 89A† Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C V GS EAS IAR EAR dv/dt TJ TSTG Fifth Generation HEXFETs from International Rectifier utilize advanced processing

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRL3705NLPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRL3705NS N-Channel MOSFET INCHANGE
IRL3705N N-Channel MOSFET INCHANGE
IRL3705NL N-Channel MOSFET INCHANGE
IRL3705NPBF N-Channel MOSFET INCHANGE
IRL3705NPbF Power MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRL3705NS Power MOSFET
IRL3705N Power MOSFET
IRL3705NL Power MOSFET
IRL3705NLPBF HEXFET Power MOSFET
IRL3705NPBF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PD - 95381 Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRL3705NS) l Low-profile through-hole (IRL3705NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l IRL3705NSPbF IRL3705NLPbF D HEXFET® Power MOSFET VDSS = 55V G S RDS(on) = 0.01Ω ID = 89A† Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C V GS EAS IAR EAR dv/dt TJ TSTG Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.