IRL3705NPBF Datasheet | International Rectifier

- Logic - Level Gate Drive - Advanced Process Technology - Dynamic dv/dt Rating - 175°C Operating Temperature - Fast Switching - Fully Avalanche Rated - Lead-Free Description Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all mercial industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO220 contribute to its wide acceptance throughout the industry. IRL3705NPb F HEXFET® Power MOSFET VDSS RDS(on) max. 55V 0.01 89A G Gate TO-220AB IRL3705NPb F D Drain S Source Base part number IRL3705NPb F Package Type TO-220 Standard Pack Form Quantity Tube Orderable Part Number IRL3705NPb...