| Part Number | IRL3705NPBF Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview | Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig. rm Quantity Tube 50 Orderable Part Number IRL3705NPbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor. |
IRL3705NPBF Datasheet and Specifications PDF
The IRL3705NPBF is a Power MOSFET.
| Part Number | IRL3705NPBF Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
IRL3705NPBF
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤10mΩ ·Lead-Free ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for rob.
*Static drain-source on-resistance: RDS(on) ≤10mΩ *Lead-Free *Fast Switching Speed *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *reliable device for use in a wide variety of applications *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SY. |
| Part Number | IRL3705NPBF Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | Infineon |
| Overview | Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig. rm Quantity Tube 50 Orderable Part Number IRL3705NPbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor. |